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- [1] TEMPERATURE-DEPENDENCE OF ELECTRON-BEAM-INDUCED CURRENT IMAGE OF SEMIINSULATING UNDOPED LIQUID-ENCAPSULATED CZOCHRALSKI GAAS JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (11A): : 2970 - 2971
- [4] DEEP ELECTRON TRAPS IN UNDOPED SEMI-INSULATING GAAS GROWN BY THE LIQUID ENCAPSULATED CZOCHRALSKI METHOD JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (06): : L333 - L335