DC AND MICROWAVE COMPARISON OF GAAS MESFET'S ON GAAS AND SI SUBSTRATES.

被引：0
|
作者：
Fischer, Russell J. [1 ]
Chand, Naresh [1 ]
Kopp, William F. [1 ]
Peng, Chin-Kun [1 ]
Morkoc, Hadis [1 ]
Gleason, K.Reed [1 ]
Scheitlin, D. [1 ]
机构：
[1] Univ of Illinois, Urbana, IL, USA, Univ of Illinois, Urbana, IL, USA
来源：
IEEE Transactions on Electron Devices | 1986年 / ED-33卷 / 02期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
20
引用
收藏
页码：206 / 213
相关论文
共 50 条
  • [1] A DC AND MICROWAVE COMPARISON OF GAAS-MESFETS ON GAAS AND SI SUBSTRATES
    FISCHER, RJ
    CHAND, N
    KOPP, WF
    PENG, CK
    MORKOC, H
    GLEASON, KR
    SCHEITLIN, D
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (02) : 206 - 213
  • [2] Integrated Microwave Circuits on GaAs Substrates.
    Biethan, Gunter
    Scientia Electrica, 1973, 19 (04): : 134 - 146
  • [3] PHOTOLUMINESCENCE STUDY OF GaAs GROWN DIRECTLY ON Si SUBSTRATES.
    Enatsu, Masao
    Shimizu, Masafumi
    Mizuki, Toshio
    Sugawara, Kazushi
    Sakurai, Takeshi
    Japanese Journal of Applied Physics, Part 2: Letters, 1987, 26 (09): : 1468 - 1471
  • [4] EPITAXIALLY INDUCED STRESS IN GaAs LAYER ON V-GROOVED Si AND GaAs SUBSTRATES.
    Hashimoto, Akihiro
    Kamijoh, Takeshi
    Watanabe, Nozomu
    1600, (26):
  • [5] A COMPARISON OF THE GAAS-MESFET AND HBT FOR POWER MICROWAVE AMPLIFICATION
    LONG, SI
    19TH EUROPEAN MICROWAVE CONFERENCE : MICROWAVE 89, 1989, : 219 - 224
  • [6] GAAS/ALGAAS HETEROJUNCTION EMITTER-DOWN BIPOLAR CIRCUITS FABRICATED ON GAAS-ON-SI SUBSTRATES.
    Tran, L.T.
    Matyi, R.J.
    Shichijo, H.
    Yuan, H.T.
    Lee, J.W.
    1600, (ED-34):
  • [7] Evaluation of microwave GaAs MESFET performance
    Saleh, MB
    ElSherief, AY
    Rizk, MRM
    AboulSeoud, AK
    38TH MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS, PROCEEDINGS, VOLS 1 AND 2, 1996, : 1216 - 1219
  • [8] Selectively oxidized GaAs MESFET's transferred to a Si substrate
    Wheeler, CB
    Mathine, DL
    Johnson, SR
    Maracas, GN
    Allee, DR
    IEEE ELECTRON DEVICE LETTERS, 1997, 18 (04) : 138 - 140
  • [9] A COMPARISON OF THE GAAS-MESFET AND THE ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR FOR POWER MICROWAVE AMPLIFICATION
    LONG, SI
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (07) : 1274 - 1278
  • [10] EPITAXIAL DEPOSITION OF GaAs AND GaAsP ON Ge SUBSTRATES.
    Jager, H.
    Seipp, E.
    1600, (49):
12345