ION BEAM INDUCED ATOMIC MIXING IN Ti/SiC.

被引：0

作者：

Miyagawa, Y. ^{[1
]}

Miyagawa, S. ^{[1
]}

机构：

[1] Government Industrial Research Institute, Nagoya, 1-1, Hirate-cho, Kita-ku, Nagoya, 462, Japan

来源：

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms | 1987年 / B28卷 / 01期

关键词：

CERAMIC MATERIALS - Ion Implantation - ION BEAMS - SILICON CARBIDE - TITANIUM AND ALLOYS;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The effects of 100 kev N//2** plus and Ar** plus ion implantation on atomic mixing and the hardness in 400 A Ti deposited SiC were investigated by means of Monte Carlo simulation, He backscattering, Auger electron spectroscopy, and Vickers indentation method. It was shown that the carbon concentration near the surface was increased remarkably by N//2** plus ion implantation at 1000 degree C, and those C atoms formed TiC. The experimental results far exceed the results obtained by the Monte Carlo simulation based on binary collision model. It was concluded that the C atoms, which originated from lattice sites in SiC by collision cascades, would migrate to the upper Ti layer by radiation enhanced thermal diffusion and react with Ti atoms.

引用

页码：27 / 33

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