Growth of AlxGa1-xN (0&lex&le0.2) and fabrication of AlGaN/GaN superlattice by RF-source MBE

被引：0

作者：

Nozawa, Kazuhiko ^{[1
]}

Maeda, Narihiko ^{[1
]}

Hirayama, Yoshiro ^{[1
]}

Kobayashi, Naoki ^{[1
]}

机构：

[1] NTT Basic Research Lab, Kanagawa, Japan

来源：

Journal of Crystal Growth | / 189-190卷

关键词：

Molecular beam epitaxy - Nitrides - Sapphire - Semiconducting aluminum compounds - Semiconductor growth - Semiconductor superlattices - Transmission electron microscopy - X ray crystallography;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Based on the two-step growth, GaN and AlGaN on sapphire (0 0 0 1) were grown by MBE using an RF-source. We have attained a very flat growing surface by optimizing growth conditions both for the buffer layer and the main growth. We also grew AlGaN/GaN superlattices to demonstrate the flatness achieved on the growth surface. From X-ray diffraction and transmission electron microscopy observations, the abruptness of the interfaces and excellent controllability of the thickness were confirmed.

引用

页码：114 / 118

共 8 条

[1] Growth of AlxGa1-xN (0≤x≤0.2) and fabrication of AlGaN/GaN superlattice by RF-source MBE
Nozawa, K
Maeda, N
Hirayama, Y
Kobapashi, N
JOURNAL OF CRYSTAL GROWTH, 1998, 189 : 114 - 118
[2] MBE growth and properties of GaN and AlxGa1-xN on GaN/SiC substrates
Johnson, MAL
Fujita, S
Rowland, WH
Hughes, WC
He, YW
ElMasry, NA
Cook, JW
Schetzina, JF
Ren, J
Edmond, JA
JOURNAL OF ELECTRONIC MATERIALS, 1996, 25 (05) : 793 - 797
[3] Growth of GaN/AlxGa1-xN (x=0.65) superlattices on Si(111) substrates using RF-MBE
Somintac, AS
Kikuchi, T
Odawara, M
Udagawa, T
Wada, M
Ohachi, T
JOURNAL OF RARE EARTHS, 2006, 24 : 1 - 3
[4] Effect of GaN template thickness and morphology on AlxGa1-xN (0 < x < 0.2) growth by MOVPE
Halidou, I.
Toure, A.
Fouzri, A.
Ramonda, M.
El Jani, B.
APPLIED SURFACE SCIENCE, 2013, 280 : 660 - 665
[5] Issues and examples regarding growth of AlN, GaN and AlxGa1-xN thin films via OMVPE and gas source MBE
Davis, RF
Weeks, TW
Bremser, MD
Tanaka, S
Kern, RS
Sitar, Z
Ailey, KS
Perry, WG
Wang, C
GALLIUM NITRIDE AND RELATED MATERIALS, 1996, 395 : 3 - 13
[6] Growth and characteristics of Ni-based Schottky-type AlxGa1-xN ultraviolet photodetectors with AlGaN/GaN superlattices -: art. no. 124505
Park, KY
Kwon, BJ
Cho, YH
Lee, SA
Son, JH
JOURNAL OF APPLIED PHYSICS, 2005, 98 (12)
[7] Growth of free-standing bulk wurtzite AlxGa1-xN layers by molecular beam epitaxy using a highly efficient RF plasma source
Novikov, S. V.
Staddon, C. R.
Sahonta, S. -L.
Oliver, R. A.
Humphreys, C. J.
Foxon, C. T.
JOURNAL OF CRYSTAL GROWTH, 2016, 456 : 151 - 154
[8] Investigation on impact of AlxGa1-xN and InGaN back barriers and source-drain spacing on the DC/RF performance of Fe-doped recessed T-gated AlN/GaN HEMT on SiC wafer for future RF power applications
Mounika, B.
Ajayan, J.
Bhattacharya, Sandip
MICRO AND NANOSTRUCTURES, 2023, 175

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