Electronic properties of ion implanted hydrogenated amorphous carbon

被引:0
|
作者
Universita di Messina, Messina, Italy [1 ]
机构
来源
J Electron Spectrosc Relat Phenom | / 89-95期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] ELECTRONIC-PROPERTIES OF ION-IMPLANTED HYDROGENATED AMORPHOUS-CARBON
    CURRO, G
    MONDIO, G
    NERI, F
    FOTI, G
    COMPAGNINI, G
    JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1995, 72 : 89 - 95
  • [2] Electronic conduction in ion implanted amorphous carbon thin films
    Khan, RUA
    Silva, SRP
    INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2000, 14 (2-3): : 195 - 205
  • [3] The structure and electronic properties of tetrahedrally bonded hydrogenated amorphous carbon
    Salek, A. G.
    Le, P. Y.
    Partridge, J. G.
    Raeber, T. J.
    Haberl, B.
    Boehler, R.
    Murdoch, B. J.
    Bradby, J. E.
    Ratcliff, T.
    Elliman, R. G.
    McKenzie, D. R.
    McCulloch, D. G.
    APPLIED PHYSICS LETTERS, 2023, 122 (18)
  • [4] Electronic properties of nitrogen diluted hydrogenated amorphous carbon films
    Kumar, S
    Dixit, PN
    Sarangi, D
    Bhattacharyya, R
    PHYSICS OF SEMICONDUCTOR DEVICES, VOLS 1 AND 2, 1998, 3316 : 1200 - 1203
  • [5] Electronic properties and doping of hydrogenated tetrahedral amorphous carbon films
    Conway, NMJ
    Milne, WI
    Robertson, J
    DIAMOND AND RELATED MATERIALS, 1998, 7 (2-5) : 477 - 481
  • [6] Ion bombardment effect on the properties of hydrogenated amorphous carbon films
    Chinese Acad of Sciences, Shanghai, China
    Surf Coat Technol, 1 (380-383):
  • [7] Electronic processes in hydrogenated amorphous carbon
    Robertson, J
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1996, 198 : 615 - 618
  • [8] Ion bombardment effect on the properties of hydrogenated amorphous carbon films
    Chen, ZY
    Yi, YH
    Zhao, JP
    Ren, CX
    Ding, XZ
    Shi, TS
    Liu, XH
    SURFACE & COATINGS TECHNOLOGY, 1998, 104 : 380 - 383
  • [9] Raman study of ion-implanted hydrogenated amorphous silicon
    Danesh, P
    Pantchev, B
    Liarokapis, E
    Schmidt, B
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2003, 14 (10-12) : 753 - 754
  • [10] Raman study of ion-implanted hydrogenated amorphous silicon
    P. Danesh
    B. Pantchev
    E. Liarokapis
    B. Schmidt
    Journal of Materials Science: Materials in Electronics, 2003, 14 : 753 - 754