ENHANCED SCHOTTKY BARRIER HEIGHTS ON n-TYPE Ga0. 47In0. 53As BY Be IMPLANTATION.

被引：0
|
作者：
Fernholz, G. [1 ]
Westphalen, R. [1 ]
Lange, W. [1 ]
Beneking, H. [1 ]
机构：
[1] RWTH, Aachen, West Ger, RWTH, Aachen, West Ger
来源：
| 1600年 / 23期
关键词：
DEPLETED P-LAYERS - LOW ENERGIES - SCHOTTKY BARRIER HEIGHTS;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 47 条
  • [1] OHMIC CONTACTS ON p-TYPE Ga0. 47In0. 53As/InP.
    Allevato, C.E.
    Selders, J.
    Schulte, F.
    Beneking, H.
    Solid-State Electronics, 1987, 30 (10): : 1039 - 1042
  • [2] PASSIVATION OF Ga0. 47In0. 53As BY a-Si:H.
    Belkouch, S.
    Valentin, F.
    Deneuville, A.
    Le Vide, les couches minces, 1988, 43 (241): : 249 - 250
  • [3] InP/Ga0. 47In0. 53As SUPERLATTICE AVALANCHE PHOTODIODE.
    Batra, S.
    Lahiri, A.
    Chakrabarti, P.
    Electronics Letters, 1988, 24 (15): : 964 - 965
  • [4] BEHAVIOR OF UNINTENTIONAL IMPURITIES IN Ga0. 47In0. 53As GROWN BY MBE.
    Brown, A.S.
    Palmateer, S.C.
    Wicks, G.W.
    Eastman, L.F.
    Calawa, A.R.
    Journal of Electronic Materials, 1985, 14 (03): : 367 - 378
  • [5] DEEP Fe AND INTRINSIC DEFECT LEVELS IN Ga0. 47In0. 53As/InP.
    Goetz, K.-H.
    Bimberg, D.
    Brauchle, K.-A.
    Juergensen, H.
    Selders, J.
    Razeghi, M.
    Kuphal, E.
    1600, (46):
  • [6] STUDY OF THE VALENCE BAND STRUCTURE OF Ga0. 47In0. 53As BY ANGLE RESOLVED PHOTOEMISSION.
    Rowe, J.E.
    Pearsall, T.P.
    Logan, R.A.
    Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics, 1982, 117-118 (Pt I): : 347 - 349
  • [7] ANNEALING OF ION-IMPLANTED Ga0. 47In0. 53As.
    Shahid, M.A.
    Anjum, M.
    Sealy, B.J.
    Radiation effects letters, 1984, 86 (2-3): : 87 - 91
  • [8] OPTICAL MEASUREMENTS OF GAIN COEFFICIENTS IN Ga0. 47In0. 53As.
    Zielinski, E.
    Hausser, S.
    Eisele, H.
    Schweizer, H.
    Pilkuhn, M.H.
    Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics, 1984, 129 B-C (1-3): : 450 - 454
  • [9] THEORETICAL INVESTIGATION OF n + -n-n + Ga0. 47In0. 53As TEO`s UP TO THE MILLIMETER-WAVE RANGE.
    Friscourt, M.R.
    Rolland, P.A.
    Fauquembergue, R.
    Electron device letters, 1984, EDL-5 (11): : 434 - 436
  • [10] GA0. 47IN0. 53As/InP DOUBLE-HETEROSTRUCTURE AND MULTIQUANTUM WELL LASERS GROWN BY CHEMICAL BEAM EPITAXY.
    Tsang, Won T.
    IEEE Journal of Quantum Electronics, 1987, QE-23 (06) : 936 - 942
12345