Observation of GaAs(110) surface by an ultrahigh-vacuum atomic force microscope

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[1] Sugawara, Yasuhiro
[2] Ohta, Masahiro
[3] Hontani, Kouji
[4] Morita, Seizo
[5] Osaka, Fukunobu
[6] Ohkouchi, Shunsuke
[7] Suzuki, Mineharu
[8] Nagaoka, Hideki
[9] Mishima, Shuzo
[10] Okada, Takao
来源：
Sugawara, Yasuhiro | 1600年 / JJAP, Minato-ku, Japan卷 / 33期
关键词：
Semiconducting gallium arsenide;
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