PHOTOLUMINESCENCE CHANGES UNDER HIGH-INTENSITY EXCITATION OF Al2O3-COATED GaAs AND THEIR RELEVANCE TO EVALUATION OF FACET COATING PROCEDURES.

被引：0
|
作者：
Swaminathan, V. [1 ]
Dautremont-Smith, W.C. [1 ]
Anthony, P.J. [1 ]
机构：
[1] AT&T Bell Lab, Murray Hill, NJ,, USA, AT&T Bell Lab, Murray Hill, NJ, USA
来源：
Materials Letters | 1984年 / 2卷 / 03期
关键词：
D O I：
10.1016/0167-577X(84)90019-3
中图分类号：
学科分类号：
摘要：
9
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页码：179 / 183
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