Hydrogenated amorphous silicon deposited at very high growth rates by an expanding Ar-H2-SiH4 plasma

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作者：
Kessels, W.M.M.
Severens, R.J.
Smets, A.H.M.
Korevaar, B.A.
Adriaenssens, G.J.
Schram, D.C.
Van, De Sanden, M.C.M.
机构：
[1] AKZO-NOBEL Central Research, P.O. Box 9300, 6800 SB Arnhem, Netherlands
[2] Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, Netherlands
[3] Semiconductor Physics Laboratory, Katholieke Universiteit Leuven, Celestijnenlaan 200 D, B3001 Heverlee-Leuven, Belgium
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| 1600年 / American Institute of Physics Inc.卷 / 89期
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