EFFECT OF PRIMARY IONIZATION IN AMORPHOUS SILICON DETECTORS.

被引：0
|
作者：
Equer, B. [1 ]
Karar, A. [1 ]
机构：
[1] CNRS, Palaiseau, Fr, CNRS, Palaiseau, Fr
来源：
Nuclear instruments and methods in physics research | 1988年 / A271卷 / 03期
关键词：
CHARGED PARTICLES - Spectrum Analysis - PARTICLE DETECTORS - Materials;
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学科分类号：
摘要：
The characteristics of the signal produced in amorphous silicon detectors have been studied with alphas and protons of energy in the range 400 kev to 5. 8 Mev. The detectors are p-i-n structures fabricated by plasma decomposition of silane. They are operated under inverse polarization from 0 to 100 V. The collected charge is studied as a function of the energy deposited in the detectors. The mechanisms involved in the charge collection are analyzed and the consequences over future detector development are discussed.
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页码：574 / 584
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