ELECTRICAL PROPERTIES OF 6H-SiC p-n JUNCTIONS WITH AN EPITAXIAL p + -TYPE Al-DOPED LAYER.

被引：0
|
作者：
Verenchikova, R.G.
Vodakov, Yu.A.
Litvin, D.P.
Mokhov, E.N.
Ramm, M.G.
Sankin, V.I.
Ostroumov, A.G.
Sokolov, V.I.
机构：
来源：
Soviet physics. Semiconductors | 1982年 / 16卷 / 11期
关键词：
Compilation and indexing terms; Copyright 2025 Elsevier Inc;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
SEMICONDUCTOR DEVICES - Junctions
引用
收藏
页码：1309 / 1311
相关论文
共 50 条
  • [1] ELECTRICAL-PROPERTIES OF 6H-SIC P-N-JUNCTIONS WITH AN EPITAXIAL P+-TYPE AL-DOPED LAYER
    VERENCHIKOVA, RG
    VODAKOV, YA
    LITVIN, DP
    MOKHOV, EN
    RAMM, MG
    SANKIN, VI
    OSTROUMOV, AG
    SOKOLOV, VI
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (11): : 1309 - 1311
  • [2] Planar 6H-SiC p-n junctions prepared by selective epitaxial growth
    Christiansen, K
    Dalibor, T
    Helbig, R
    Christiansen, S
    Strunk, HP
    SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 135 - 138
  • [3] ELECTROLUMINESCENCE OF ALUMINUM-DOPED 6H-SIC P-N STRUCTURES
    LEBEDEV, AA
    POLETAEV, NK
    RASTEGAEVA, MG
    SAVKINA, NS
    SEMICONDUCTORS, 1994, 28 (10) : 981 - 984
  • [4] Numerical study of avalanche breakdown of 6H-SiC planar p-n junctions
    Stefanov, E
    Bailon, L
    Barbolla, J
    DIAMOND AND RELATED MATERIALS, 1997, 6 (10) : 1500 - 1503
  • [5] Effect of ion doping on the electrical and luminescent properties of 4H-SiC epitaxial p-n junctions
    Kalinina, EV
    Kholujanov, GF
    Zubrilov, AS
    Tsvetkov, DV
    Vatnik, MP
    Soloviev, VA
    Tretjakov, VD
    Kong, H
    Dmitriev, VA
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 46 (1-3): : 259 - 262
  • [6] The premature breakdown in 6H-SiC p-n junction
    Sankin, V. I.
    Monakhov, A. M.
    Shkrebiy, P. P.
    SILICON CARBIDE AND RELATED MATERIALS 2006, 2007, 556-557 : 431 - +
  • [7] HOPPING CONDUCTION IN AL-DOPED 6H-SIC
    LOMAKINA, GA
    MOKHOV, EN
    ODING, VG
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (01): : 72 - 74
  • [8] AVALANCHE BREAKDOWN IN EPITAXIAL SIC P-N JUNCTIONS
    VANOPDORP, C
    VRAKKING, J
    JOURNAL OF APPLIED PHYSICS, 1969, 40 (05) : 2320 - +
  • [9] Formation of surface states during Schottky barrier fabrication on Al-doped p-type 6H-SiC
    Venter, A
    Samiji, ME
    Leitch, AW
    DIAMOND AND RELATED MATERIALS, 2004, 13 (4-8) : 1166 - 1170
  • [10] Noise in 6H-SiC ion implanted p-n diodes:: Effect of the active area on the noise properties of these junctions
    Ouacha, H
    Willander, M
    Wahab, Q
    Ouacha, A
    Holmén, G
    JOURNAL OF APPLIED PHYSICS, 1999, 85 (09) : 6557 - 6562
12345