Structural Perfection of Czochralski Grown Silicon Crystals Annealed above 1500 K under Hydrostatic Pressure

被引：0
|
作者：
Datsenko, L.
Khrupa, V.
Krasulya, S.
Misiuk, A.
机构：
来源：
Acta Physica Polonica A | / 91卷 / 05期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] Structural perfection of Czochralski grown silicon crystals annealed above 1500 K under hydrostatic pressure
    Datsenko, L
    Khrupa, V
    Krasulya, S
    Misiuk, A
    Hartwig, J
    Surma, B
    ACTA PHYSICA POLONICA A, 1997, 91 (05) : 929 - 933
  • [2] Structural perfection of silicon single crystals grown by the czochralski technique in magnetic field
    Datsenko, L.I.
    Tkacheva, T.M.
    Vorontsova, L.A.
    Babich, V.M.
    Skorokhod, M.Ya.
    Physics of Metals (English Translation of Metallofizika), 1994, 14 (02):
  • [3] Photoluminescence studies of Czochralski grown silicon pressure -: annealed at ≤ 1000K
    Misiuk, A
    Surma, HB
    SINGLE CRYSTAL GROWTH, CHARACTERIZATION, AND APPLICATIONS, 1999, 3724 : 239 - 243
  • [4] Influence of hydrostatic pressure at the temperatures about 1500 K on defect structure of Czochralski silicon
    Auleytner, J
    Datsenko, L
    Klad'ko, V
    Machulin, V
    Melnyk, V
    Prokopenko, I
    Bak-Misiuk, J
    Misiuk, A
    JOURNAL OF ALLOYS AND COMPOUNDS, 1999, 286 (1-2) : 246 - 249
  • [5] Positron annihilation studies of Czochralski-grown silicon annealed under pressure
    Karwasz, GP
    Brusa, RS
    Misiuk, A
    Zecca, A
    ACTA PHYSICA POLONICA A, 1999, 95 (04) : 575 - 580
  • [6] Defects in Czochralski-grown Si-Ge annealed under high hydrostatic pressure
    Misiuk, A.
    Wierzchowski, W.
    Surma, B.
    Wnuk, A.
    Bak-Misiuk, J.
    Wieteska, K.
    Barcz, A.
    Andrianakis, A.
    Londos, C. A.
    Yang, D.
    Prujszczyk, M.
    Graeff, W.
    RADIATION PHYSICS AND CHEMISTRY, 2009, 78 : S64 - S66
  • [7] Reciprocal lattice mapping of pressure - Annealed czochralski grown silicon
    Misiuk, A
    Bak-Misiuk, J
    Jun, J
    APPLIED CRYSTALLOGRAPHY, 1998, : 483 - 486
  • [8] Peculiarities of the thermal donor formation in Czochralski grown silicon under high hydrostatic pressure
    Emtsev, VV
    Emtsev, VV
    Oganesyan, GA
    Misiuk, A
    Londos, CA
    INTERNATIONAL CONFERENCE ON SOLID STATE CRYSTALS 2000: GROWTH, CHARACTERIZATION, AND APPLICATIONS OF SINGLE CRYSTALS, 2001, 4412 : 81 - 84
  • [9] Composition and Structure of Czochralski Silicon Implanted with H2+ and Annealed under Enhanced Hydrostatic Pressure
    Kulik, M.
    Kobzev, A. P.
    Misiuk, A.
    Wierzchowski, W.
    Wieteska, K.
    Bak-Misiuk, J.
    ACTA PHYSICA POLONICA A, 2010, 117 (02) : 332 - 335
  • [10] Formation of thermal donors in Czochralski grown silicon under hydrostatic pressure up to 1 GPa
    Emtsev, VV
    Andreev, BA
    Misiuk, A
    Schmalz, K
    EARLY STAGES OF OXYGEN PRECIPITATION IN SILICON, 1996, 17 : 345 - 353
12345