Formation and electronic states of Si nanocrystallites in amorphous Si

被引:0
|
作者
Inst of Physical and Chemical, Research , Saitama, Japan [1 ]
机构
来源
J Non Cryst Solids | / pt 2卷 / 847-852期
关键词
Amorphous silicon - Calculations - Crystal structure - Electronic density of states - Grain size and shape - Luminescence - Nanostructured materials - Optical properties - Order disorder transitions - Semiconductor quantum dots - Transmission electron microscopy;
D O I
暂无
中图分类号
学科分类号
摘要
Si nanocrystallites formed in amorphous Si matrix emit intense blue luminescence at room temperature. A grain size reduction of Si crystallites to 3-5 nm leads to generating the luminescence. It is demonstrated that the blue luminescence from Si nanocrystallites exhibits distinct features of no intensity degradation and very fast decay lifetime (approx. 170 ps). Direct transitions in Si nanocrystallites are concluded to be the origin of the blue light emission. Furthermore, theoretical calculations of order (nanocrystalline Si phase) and disorder (amorphous Si phase) quantum dots system indicates that resonant states are generated in the nanocrystalline Si phase. The direct transitions between the resonant states should be enhanced by a modification of k-selection rules due to an interaction of the finite size crystalline region with the amorphous region, which result in the blue light emission in the nanocrystalline Si sample.
引用
收藏
相关论文
共 50 条
  • [1] Formation and electronic states of Si nanocrystallites in amorphous Si
    Zhao, XW
    Nomura, S
    Aoyagi, Y
    Sugano, T
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1996, 198 : 847 - 852
  • [2] Electronic structure and localized states in amorphous Si and hydrogenated amorphous Si
    Meidanshahi, Reza Vatan
    Bowden, Stuart
    Goodnick, Stephen M.
    PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2019, 21 (24) : 13248 - 13257
  • [3] Formation of Si Nanocrystallites in Al-Added Amorphous Si Films by Electron Beam Irradiation
    Shim, Jae-Hyun
    Cho, Nam-Hee
    Kim, Jin-Gyu
    Kim, Youn-Joong
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (03)
  • [4] Photoexcitation of Si-Si surface states in nanocrystallites
    Nayfeh, M. H.
    Rigakis, N.
    Yamani, Z.
    Physical Review B: Condensed Matter, 1997, 56 (04):
  • [5] Photoexcitation of Si-Si surface states in nanocrystallites
    Nayfeh, MH
    Rigakis, N
    Yamani, Z
    PHYSICAL REVIEW B, 1997, 56 (04): : 2079 - 2084
  • [6] ELECTRONIC DENSITY OF STATES OF AMORPHOUS SI AND GE
    THORPE, MF
    WEAIRE, D
    PHYSICAL REVIEW LETTERS, 1971, 27 (23) : 1581 - &
  • [7] Photoexcitation of Si-Si radiative surface states in nanocrystallites
    Nayfeh, MH
    Rigakis, N
    Yamani, Z
    MATERIALS AND DEVICES FOR SILICON-BASED OPTOELECTRONICS, 1998, 486 : 243 - 248
  • [8] CALCULATION OF ELECTRONIC DENSITY OF STATES FOR AMORPHOUS SI AND GE
    HALDER, NC
    WOURMS, RL
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1974, 19 (03): : 360 - 360
  • [9] Size control of Si nanocrystallites formed in amorphous Si matrix by Er-doping
    Zhao, XW
    Komuro, S
    Fujita, S
    Isshiki, H
    Aoyagi, Y
    Sugano, T
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1998, 51 (1-3): : 154 - 157
  • [10] Size control of Si nanocrystallites formed in amorphous Si matrix by Er-doping
    Zhao, Xinwei
    Komuro, Shuji
    Fujita, Satoshi
    Isshiki, Hideo
    Aoyagi, Yoshinobu
    Sugano, Takuo
    Materials science & engineering. B, Solid-state materials for advanced technology, 1998, B51 (1-3): : 154 - 157