Study of band-edge parameters in a-Si:H alloys by polarized electroabsorption effects

被引：1

作者：

Tsutsumi, Y. ^{[1
]}

Yamamoto, H. ^{[1
]}

Hattori, K. ^{[1
]}

Okamoto, H. ^{[1
]}

Hamakawa, Y. ^{[1
]}

机构：

[1] Akashi Coll of Technology, Akashi, Japan

来源：

Journal of Non-Crystalline Solids | 1993年 / 164-66卷 / pt 2期

关键词：

Alloys - Mathematical models - Silicon - Solid state physics - Theory - Transport properties;

D O I：

10.1016/0022-3093(93)91141-O

中图分类号：

学科分类号：

摘要：

Polarized electroabsorption method has been used to evaluate the carrier mean free path as well as mobility near the conduction and valence band edges in hydrogenated amorphous silicon alloys. The results show that the electron mobility reaches about 13 cm2/Vs for device quality undoped a-Si:H, while the hole mobility is about 15% of that for electron. Alloying with Ge or C leads to a continuous reduction of mobilities with the largest drop for (Ge, C) concentrations above 10%.

引用

页码：893 / 896

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