High characteristic temperature of near-1.3-μm InGaAs/GaAs quantum-dot lasers

被引:0
|
作者
Fujitsu Lab Ltd, Atsugi, Japan [1 ]
机构
关键词
Lasing - Quantum dot lasers - Ridge type lasers - Threshold current;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:345 / 346
相关论文
共 50 条
  • [1] High characteristic temperature of near-1.3-μm InGaAs/GaAs quantum-dot lasers
    Mukai, Kohki
    Nakata, Yoshiaki
    Otsubo, Koji
    Sugawara, Mitsuru
    Yokoyama, Naoki
    Ishikawa, Hiroshi
    Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest, 2000, : 363 - 364
  • [2] High characteristic temperature of near-1.3-μm InGaAs/GaAs quantum-dot lasers at room temperature
    Mukai, K
    Nakata, Y
    Otsubo, K
    Sugawara, M
    Yokoyama, N
    Ishikawa, H
    APPLIED PHYSICS LETTERS, 2000, 76 (23) : 3349 - 3351
  • [3] Performance of 1.3-μm InGaAs/GaAs quantum-dot lasers and their physics
    Sugawara, M
    Mukai, K
    Nakata, Y
    Ishilkawa, H
    LEOS 2000 - IEEE ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS. 1 & 2, 2000, : 123 - 124
  • [4] High Characteristic Temperature 1.3 μm InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy
    Ji Hai-Ming
    Yang Tao
    Cao Yu-Lian
    Xu Peng-Fei
    Gu Yong-Xian
    Ma Wen-Quan
    Wang Zhan-Guo
    CHINESE PHYSICS LETTERS, 2010, 27 (02)
  • [5] InAs quantum-dot lasers operating near 1.3μm with high characteristic temperature for continuous-wave operation
    Chen, H
    Zou, Z
    Shchekin, OB
    Deppe, DG
    ELECTRONICS LETTERS, 2000, 36 (20) : 1703 - 1704
  • [6] 1.3 μm quantum-dot lasers with improved high temperature properties
    Klopf, F
    Krebs, R
    Reithmaier, JP
    Forchel, A
    2001 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2001, : 473 - 476
  • [7] High power temperature-insensitive 1.3 μm InAs/InGaAs/GaAs quantum dot lasers
    Mikhrin, SS
    Kovsh, AR
    Krestnikov, IL
    Kozhukhov, AV
    Livshits, DA
    Ledentsov, NN
    Shernyakov, YM
    Novikov, II
    Maximov, MV
    Ustinov, VM
    Alferov, ZI
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2005, 20 (05) : 340 - 342
  • [8] High-performance 1.3 μm InAs/GaAs quantum-dot lasers with low threshold current and negative characteristic temperature
    Jin, C. Y.
    Liu, H. Y.
    Badcock, T. J.
    Groom, K. M.
    Gutierrez, M.
    Royce, R.
    Hopkinson, M.
    Mowbray, D. J.
    IEE PROCEEDINGS-OPTOELECTRONICS, 2006, 153 (06): : 280 - 283
  • [9] High performance 1.3 μm quantum-dot lasers
    Krebs, R
    Klopf, F
    Reithmaier, JP
    Forchel, A
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2002, 41 (2B): : 1158 - 1161
  • [10] High-performance InAs quantum-dot lasers near 1.3 μm
    Qiu, Y
    Gogna, P
    Forouhar, S
    Stintz, A
    Lester, LF
    APPLIED PHYSICS LETTERS, 2001, 79 (22) : 3570 - 3572