ON THE CORE OF THE THERMAL DONORS IN SILICON.

被引：0

作者：

Lindstrom, J.L. ^{[1
]}

Svensson, B. ^{[1
]}

Corbett, J.W. ^{[1
]}

机构：

[1] Forsvarets Forskningsanstalt, Linkoping, Swed, Forsvarets Forskningsanstalt, Linkoping, Swed

来源：

| 1985年 / 91期

关键词：

CRYSTALS - Growing - SEMICONDUCTOR MATERIALS - Thermal Effects;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

There is a hierarchy of double donors which arise upon annealing Czochralski silicon. The theory of the hierarchy of ground states argues that the core is Coulombic plus a repulsive contribution, i. e. , the electronic properties, such as the ground state energy, may not be grossly affected by the details of the interior of the core. The first thermal donor in the hierarchy is apt to be most affected by the core, but its maximum concentration never reaches that of the subsequent donors.

引用

共 50 条

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Corbett, James W.
Frisch, Harry L.
Snyder, Lawrence C.
Materials Letters, 1984, 2 (03) : 209 - 210
[2] MODIFIABLE THERMAL DONORS IN SILICON.
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[4] ON THE CORE OF THE THERMAL DONORS IN SILICON
LINDSTROM, JL
SVENSSON, B
CORBETT, JW
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[6] Core structure of thermal donors in silicon
Chadi, DJ
PHYSICAL REVIEW LETTERS, 1996, 77 (05) : 861 - 864
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Phys Rev Lett, 5 (861):
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Ge, Weikun
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Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics, 1982, 117-118 (Pt I): : 122 - 124
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Zeitschrift fuer Metallkunde/Materials Research and Advanced Techniques, 1988, 79 (03): : 157 - 158

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