Surface morphology of 3C-SiC heteroepitaxial layers grown by LPCVD on Si substrates

被引：0
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作者：
Takahashi, T. [1 ]
Ishida, Y. [1 ]
Okumura, H. [1 ]
Yoshida, S. [1 ]
Sekigawa, T. [1 ]
机构：
[1] Electrotechnical Lab, Tsukuba, Japan
来源：
Materials Science Forum | 1998年 / 264-268卷 / pt 1期
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页码：207 / 210
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