TEMPERATURE DEPENDENCE OF THE ANISOTROPY OF THE DRAG THERMOELECTRIC POWER OF UNIAXIALLY DEFORMED n-TYPE Si.

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作者：

Baranskii, P.I.

Savyak, V.V.

Simonenko, Yu.V.

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来源：

Soviet physics. Semiconductors | 1984年 / 18卷 / 06期

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页码：659 / 661

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[1] TEMPERATURE-DEPENDENCE OF THE ANISOTROPY OF THE DRAG THERMOELECTRIC-POWER OF UNIAXIALLY DEFORMED N-TYPE SI
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[2] ANISOTROPY OF THERMOELECTRIC-POWER OF UNIAXIALLY DEFORMED N-TYPE GE IN HEAVY DOPING RANGE
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1600, (09):
[7] TRANSVERSE THERMOELECTRIC EFFECTS IN UNIAXIALLY DEFORMED N-TYPE GE
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[8] ANGULAR-DEPENDENCE OF PIEZOTHERMOELECTRIC POWER OF UNIAXIALLY DEFORMED N-TYPE SILICON IN THE ELECTRON-PHONON DRAG REGION
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[9] CARRIER-DENSITY DEPENDENCES OF THE ANISOTROPY PARAMETER OF THE DRAG THERMOELECTRIC-POWER OF N-TYPE SI
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[10] ANISOTROPY OF THERMOELECTRIC EFFECTS IN ELASTICALLY DEFORMED N-TYPE GE
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