INVESTIGATION OF THE DIFFUSION LENGTH IN VARIABLE-GAP AlxGa1 - xAs SOLID SOLUTIONS.

An investigation was made of the influence of an internal electric field E created by a gradient of the band gap E//g on the diffusion L and diffusion-drift l// plus lengths of nonequilibrium holes in variable-gap n-type Al//xGa//1// minus //xAs solid solutions. Undoped solid solutions were prepared by liquid epitaxy from a confined melt. The equilibrium electron density at 300 degree K in these epitaxial films was (1-5) multiplied by 10**1**5 cm** minus **3. The composition gradient of the variable-gap semiconductor resulted, on the one hand, in an increase in l// plus under the action of the internal longitudinal field and, on the other, in a reduction in L because of an increase in the defect concentration in a mechanical stress field.