Reliability of smart power devices

被引：0
|
作者：
Murari, B. [1 ]
机构：
[1] SGS-THOMSON Microelectronics, Milano, Italy
来源：
Microelectronics Reliability | 1997年 / 37卷 / 10-11期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：1735 / 1742
相关论文
共 50 条
  • [1] Reliability of smart power devices
    Murari, B
    MICROELECTRONICS AND RELIABILITY, 1997, 37 (10-11): : 1735 - 1742
  • [2] Reliability study of thermal cycling stress on smart power devices
    Zhang, Ming
    Yoshihisa, Yasuki
    Furuya, Keiichi
    Imai, Yukari
    Hatasako, Kenichi
    Ipposhi, Takashi
    Maegawa, Shigeto
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2014, 53 (04)
  • [3] SMART POWER DEVICES
    TIHANYI, J
    MICROELECTRONIC ENGINEERING, 1992, 19 (1-4) : 141 - 144
  • [4] Reliability of Power Devices
    Meneghesso, Gaudenzio
    2016 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP (IIRW), 2016, : xii - xii
  • [5] Impact of thermal overload operation on wirebond and metallization reliability in smart power devices
    Glavanovics, M
    Detzel, T
    Weber, K
    ESSDERC 2004: PROCEEDINGS OF THE 34TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2004, : 273 - 276
  • [6] Reliability tests on power devices
    Marcos, J
    Pallás, JMP
    Fernández-Gómez, S
    ANNUAL RELIABILITY AND MAINTAINABILITY SYMPOSIUM, 2002 PROCEEDINGS, 2002, : 618 - 621
  • [7] SMART POWER DEVICES - EDITORS LETTER
    不详
    ELECTRONICS, 1984, 57 (11): : 6 - 6
  • [8] Technology CAD for smart power devices
    Plasun, R
    Pichler, C
    Simlinger, T
    Selberherr, S
    PHYSICS OF SEMICONDUCTOR DEVICES, VOLS 1 AND 2, 1998, 3316 : 481 - 488
  • [9] Modelling and Characterisation of Smart Power Devices
    Wunderle, B.
    Ras, M. Abo
    Springborn, M.
    May, D.
    Kleff, J.
    Oppermann, H.
    Toepper, M.
    Caroff, T.
    Schacht, R.
    Mitova, R.
    2012 18TH INTERNATIONAL WORKSHOP ON THERMAL INVESTIGATIONS OF ICS AND SYSTEMS (THERMINIC), 2012, : 229 - 237
  • [10] Technology CAD for smart power devices
    Simlinger, T
    Pichler, C
    Plasun, R
    Selberherr, S
    CAS '97 PROCEEDINGS - 1997 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 20TH EDITION, VOLS 1 AND 2, 1997, : 383 - 393
12345