GaN evaporation and enhanced diffusion of Ar during high-temperature ion implantation

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[1] [1,Usov, I.
[2] Parikh, N.
[3] Kudriavtsev, Y.
[4] Asomoza, R.
[5] Reitmeier, Z.
[6] Davis, R.
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Usov, I. (iusov@lanl.gov) | 1600年 / American Institute of Physics Inc.卷 / 93期
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