Ballistic electron transport through a quantum point contact defined in a Si/Si0.7Ge0.3 heterostructure

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Technische Universitaet Muenchen, Garching, Germany [1 ]
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Semicond Sci Technol | / 5卷 / 711-714期
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Band structure - Heterojunctions - Low temperature effects - Magnetic field effects - Point contacts - Semiconducting silicon - Semiconducting silicon compounds - Semiconductor device models - Semiconductor quantum dots;
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摘要：
We have studied the low-temperature (T = 25 mK) ballistic transport of electrons in a split-gate device fabricated from a Si/Si0.7Ge0.3 heterostructure. In the absence of a magnetic field the conductance is quantized in units of i×4e2/h as the gate voltage is tuned where i is the number of occupied subbands. In this system, both the spin and the valley degeneracies have to be taken into account. These can be lifted by applying a perpendicular magnetic field. Magnetic depopulation of the one-dimensional subbands is observed and can be simulated using a simple square well potential model.
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