Monitoring trapped charge generation for gate oxide under stress

被引：0
|
作者：
Natl Chiao-Tung Univ, Hsinchu, Taiwan [1 ]
机构：
来源：
IEEE Trans Electron Devices | / 9卷 / 1441-1446期
关键词：
Number:; NSC86-2215-E009-025; Acronym:; NSC; Sponsor: National Science Council;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] Monitoring trapped charge generation for gate oxide under stress
    Lin, YH
    Lee, CL
    Lei, TF
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1997, 44 (09) : 1441 - 1446
  • [2] Trapped charge induced gate oxide breakdown
    Neugroschel, A
    Wang, LQ
    Bersuker, G
    JOURNAL OF APPLIED PHYSICS, 2004, 96 (06) : 3388 - 3398
  • [3] MONITORING IMPLANT INDUCED GATE OXIDE STRESS POTENTIALS
    ANGEL, G
    TU, WL
    VACUUM, 1993, 44 (3-4) : 371 - 375
  • [4] Effect of AC Stress on Oxide TDDB and Trapped Charge in Interface States
    Rebuffat, B.
    Masson, P.
    Ogier, J-L.
    Mantelli, M.
    Laffont, R.
    2014 14TH INTERNATIONAL SYMPOSIUM ON INTEGRATED CIRCUITS (ISIC), 2014, : 416 - 419
  • [5] Modeling gate oxide breakdown under bipolar stress
    Duan, XD
    Yuan, JS
    SOLID-STATE ELECTRONICS, 2000, 44 (09) : 1537 - 1541
  • [6] CHARGE TRAPPING AND INTERFACE STATE GENERATION IN NITRIDED OXIDE GATE DIELECTRICS
    ROAL, KV
    GUPTA, A
    PRADHAM, S
    ROENKER, KP
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (08) : C317 - C317
  • [7] Detection of gate oxide charge trapping by second-harmonic generation
    Fang, J
    Li, GP
    APPLIED PHYSICS LETTERS, 1999, 75 (22) : 3506 - 3508
  • [8] A new method to extract gate coupling ratio and oxide trapped charge in flash memory cell
    Tseng, JMZ
    Pedron, T
    MICROELECTRONIC ENGINEERING, 2006, 83 (02) : 218 - 220
  • [9] Gate oxide thickness dependence of edge charge trapping in NMOS transistors caused by charge injection under constant-current stress
    Chen, TP
    Huang, JY
    Tse, MS
    Tan, SS
    Ang, CH
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (06) : 1548 - 1550
  • [10] Online Gate-Oxide Degradation Monitoring of Planar SiC MOSFETs Based on Gate Charge Time
    Xie, Minghang
    Sun, Pengju
    Wang, Kaihong
    Luo, Quanming
    Du, Xiong
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 2022, 37 (06) : 7333 - 7343
12345