CORRELATION OF RADIATION EFFECTS IN TRANSISTORS AND INTEGRATED CIRCUITS.

被引：0

作者：

Sexton, Fred W. ^{[1
]}

Schwank, James R. ^{[1
]}

机构：

[1] Sandia Natl Lab, Albuquerque, NM,, USA, Sandia Natl Lab, Albuquerque, NM, USA

来源：

IEEE Transactions on Nuclear Science | 1985年 / NS-32卷 / 06期

关键词：

MOSFETS - THRESHOLD VOLTAGE;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

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[1] CORRELATION OF RADIATION EFFECTS IN TRANSISTORS AND INTEGRATED-CIRCUITS
SEXTON, FW
SCHWANK, JR
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1985, 32 (06) : 3975 - 3981
[2] Complementary Pairs of MOS Transistors in Integrated Circuits.
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