Time dependent dielectric breakdown measurements on RPECVD and thermal oxides

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North Carolina State Univ, Raleigh, United States [1 ]
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J Electrochem Soc | / 11卷 / 3881-3889期
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The authors would like to thank John Boglovits and Brian Harding for their invaluable assistance in the collection of the data presented in this paper. We would also like to thank Patrick Bednarz for his assistance in the wafer wet chemical processing. This work has been (partially) supported by the NSF Engineering Research Centers Program through the Center for Advanced Electronic Materials Processing (Grant CDR 8721505); the Semiconductor Research Corporation (SRC Contract #93-MP-132); and the SRC SCOE Program at NCSU (SRC contract 93-MC-509);
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