SEMICONDUCTOR WAFER FLATNESS MEASUREMENTS.

被引：0
|
作者：
Bonora, Anthony
机构：
来源：
Test & Measurement World | 1983年 / 3卷 / 05期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：57 / 68
相关论文
共 50 条
  • [1] The values of flatness of the earth obtained by calculation and measurements.
    Veronnet, A
    COMPTES RENDUS HEBDOMADAIRES DES SEANCES DE L ACADEMIE DES SCIENCES, 1920, 171 : 545 - 547
  • [2] FLATNESS MEASUREMENTS IN SEMICONDUCTOR TECHNOLOGY
    JARISCH, W
    F&M-FEINWERKTECHNIK & MESSTECHNIK, 1975, 83 (05): : 199 - 208
  • [3] SEMICONDUCTOR WAFER MEASUREMENTS
    ABBE, RC
    SOLID STATE TECHNOLOGY, 1974, 17 (03) : 47 - 50
  • [4] Flatness Measurements in Semiconductor Technology.
    Jaerisch, W.
    F and M; Feinwerktechnik, Mikrotechnik, Messtechnik, 1975, 83 (05): : 199 - 208
  • [5] Characterization of Semiconductor Materials and Devices by Noise Measurements.
    Graffeuil, Jacques
    Blasquez, Gabriel
    Acta electronica Paris, 1983, 25 (03): : 261 - 279
  • [6] Approaching new metrics for wafer flatness: A investigation of the lithographic consequences of wafer on-flatness
    Valley, J
    Poduje, N
    Sinha, J
    Judell, N
    Wu, J
    Boonman, M
    Tempelaars, S
    van Dommelen, Y
    Kattouw, H
    Hauschild, J
    Grabbe, A
    Stanton, L
    METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XVIII, PTS 1 AND 2, 2004, 5375 : 1098 - 1108
  • [7] MEASUREMENTS.
    Vardhan, H.
    CSIO Communications (Central Scientific Instruments Organization), 1982, 9 (2-3): : 52 - 60
  • [8] WAFER FLATNESS TESTING.
    Bettes, Ted C.
    Semiconductor International, 1982, 5 (02) : 77 - 92
  • [9] DETERMINATION OF THE DEGREE OF COMPENSATION OF AN EXTRINSIC SEMICONDUCTOR FROM THE OPTICAL ABSORPTION MEASUREMENTS.
    Kurbatov, V.A.
    Penin, N.A.
    Solov'ev, N.N.
    Soviet physics. Semiconductors, 1984, 18 (02): : 177 - 179
  • [10] Wafer flatness modeling for scanning steppers
    Goodall, RK
    METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY X, 1996, 2725 : 76 - 84
12345