HYDROGEN INCORPORATION SCHEME IN a-Si1 - xCx:H.

被引:0
|
作者
Kumeda, Minoru [1 ]
Nakanishi, Satoko [1 ]
Shimizu, Tatsuo [1 ]
机构
[1] Kanazawa Univ, Kanazawa, Jpn, Kanazawa Univ, Kanazawa, Jpn
关键词
D O I
暂无
中图分类号
学科分类号
摘要
10
引用
收藏
页码:1915 / 1917
相关论文
共 50 条
  • [1] HYDROGEN INCORPORATION SCHEME IN A-SI1-XCX-H
    KUMEDA, M
    NAKANISHI, S
    SHIMIZU, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (11): : L1915 - L1917
  • [2] PREPARATION OF a-Si:H/a-Si1 - xCx:H SUPERLATTICES.
    Nishikawa, Satoshi
    Kakinuma, Hiroaki
    Watanabe, Tsukasa
    Nihei, Kouji
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1986, 25 (08): : 1141 - 1143
  • [3] STRUCTURE OF SPUTTERED a-Si1 - XCX FILMS.
    Inoue, Shozo
    Suzaki, Yoshifumi
    Yoshii, Kumayasu
    Kawabe, Hideaki
    Nippon Kinzoku Gakkai-si, 1987, 51 (01): : 12 - 17
  • [4] Annealing behavior of light-induced metastable defects in a-Si1−xCx : H
    A. O. Kodolbasç
    ö. öktü
    Journal of Materials Science: Materials in Electronics, 2003, 14 : 739 - 740
  • [5] Morphological and structural modifications induced in a-Si1−xCx:H films by excimer laser annealing
    U. Coscia
    G. Ambrosone
    D. K. Basa
    E. Tresso
    A. Chiodoni
    N. Pinto
    R. Murri
    Applied Physics A, 2010, 100 : 1163 - 1168
  • [6] ANALYSIS OF CARBON CONTENT AND DISTRIBUTION IN a-Si1 - xCx:H FILMS BY RESONANT SCATTERING.
    Sie, S.H.
    McKenzie, D.R.
    Smith, G.B.
    Ryan, C.G.
    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1985, B15 (1-6) : 632 - 635
  • [7] A spherical distributed Bragg reflector based on a-Si1–xCx: H and a-SiO2 layers
    A. V. Medvedev
    A. A. Dukin
    N. A. Feoktistov
    V. G. Golubev
    Technical Physics Letters, 2017, 43 : 885 - 888
  • [8] ELECTRON SPIN RESONANCE AND PHOTOLUMINESCENCE IN a-Si1 - xCx:H DEPOSITED AT LOW SUBSTRATE TEMPERATURE.
    Yoshimoto, Masahiro
    Fuyuki, Takashi
    Matsunami, Hiroyuki
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1987, 26 (07): : 996 - 998
  • [9] EFFECTS OF DEPOSITION CONDITIONS ON PROPERTIES OF A-Si1 - xCx:H DIAGNOSED USING OPTICAL EMISSION SPECTROSCOPY.
    Yoshimoto, Masahiro
    Aizawa, Kouichi
    Fuyuki, Takashi
    Matsunami, Hiroyuki
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1986, 25 (10): : 1465 - 1469
  • [10] Microstructure and hydrogen dynamics in a-Si1-xCx:H
    Shinar, R.
    Shinar, J.
    Williamson, D.L.
    Mitra, S.
    Kavak, H.
    Dalal, V.L.
    Materials Research Society Symposium - Proceedings, 1999, 557 : 329 - 334