Simulation of the piezoelectric effect on the device characteristics of AlGaN/GaN insulated-gate heterostructure field effect transistors

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作者：
Imanaga, Syunji [1 ]
Kawai, Hiroji [1 ]
机构：
[1] Sony Corp Research Cent, Yokohama, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1998年 / 37卷 / 11期
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页码：5906 / 5913
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