4H-SiC (112¯0) epitaxial growth

被引：0
|
作者：
Kimoto, T. [1 ]
Yamamoto, T. [1 ]
Chen, Z.Y. [1 ]
Yano, H. [1 ]
Matsunami, H. [1 ]
机构：
[1] Dept. of Electron. Sci. and Eng., Kyoto University, Yoshidahonmachi, Sakyo, Kyoto, 606-8501, Japan
来源：
Materials Science Forum | 2000年 / 338卷
关键词：
Crystal lattices - Electron traps - Epitaxial growth - Morphology - Semiconducting films - Semiconductor doping - Substrates - Surface roughness - X ray crystallography;
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摘要：
Homoepitaxial growth on micropipe-free 4H-SiC(112¯0) substrates has been systematically investigated. In contrast to step-bunched surface on conventional off-axis (0001) epilayers, the (112¯0) epilayers exhibit very smooth morphology with a surface roughness of 0.18 nm. An X-ray diffraction analysis revealed that lattice-mismatch strain between n--epilayers and n+-substrates can be reduced by introducing n-type buffer layers. The lowest donor concentration of unintentionally doped epilayers is 1×1014 cm-3. Three electron traps located at Ec-0.27, 0.32, and 0.66 eV have been detected with a total trap concentration as low as 3.8×1012 cm-3.
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