Development of a metal patterned cantilever for scanning capacitance microscopy and its application to the observation of semiconductor devices

被引:0
|
作者
Nikon Corp, Ibaraki, Japan [1 ]
机构
来源
J Vac Sci Technol B | / 4卷 / 1547-1550期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] Development of a metal patterned cantilever for scanning capacitance microscopy and its application to the observation of semiconductor devices
    Yamamoto, T
    Suzuki, Y
    Miyashita, M
    Sugimura, H
    Nakagiri, N
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1997, 15 (04): : 1547 - 1550
  • [2] Application of scanning capacitance microscopy to semiconductor devices
    Nakagiri, N
    Yamamoto, T
    Sugimura, H
    Suzuki, Y
    Miyashita, M
    Watanabe, S
    NANOTECHNOLOGY, 1997, 8 : A32 - A37
  • [3] Application of scanning capacitance microscopy to semiconductor devices
    Nakagiri, Nobuyuki
    Yamamoto, Takuma
    Sugimura, Hiroyuki
    Suzuki, Yoshihiko
    Miyashita, Masayuki
    Watanabe, Shunji
    Nanotechnology, 1997, 8 (3 A):
  • [4] Microfabricated cantilever with metallic tip for electrostatic and capacitance microscopy and its application to investigation of semiconductor devices
    Gotszalk, T
    Czarnecki, P
    Grabiec, P
    Domanski, K
    Zaborowski, M
    Rangelow, IW
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (02): : 506 - 509
  • [5] Nanoscale observation of the power semiconductor devices by scanning capacitance force microscopy and its device simulation
    Satoh, N.
    Tanaka, I
    Doi, A.
    Oda, A.
    Yamamoto, H.
    2021 23RD EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'21 ECCE EUROPE), 2021,
  • [6] Scanning capacitance microscopy on semiconductor materials and devices
    Giannazzo, F
    Raineri, V
    PROCEEDINGS OF THE 5TH MULTINATIONAL CONGRESS ON ELECTRON MICROSCOPY, 2001, : 311 - 312
  • [7] Scanning capacitance microscopy as a characterization tool for semiconductor devices
    Yamamoto, T
    Suzuki, Y
    Miyashita, M
    Sugimura, H
    Nakagiri, N
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (3B): : 1922 - 1926
  • [8] Observation of metal-oxide-semiconductor transistor operation using scanning capacitance microscopy
    Nakakura, CY
    Hetherington, DL
    Shaneyfelt, MR
    Shea, PJ
    Erickson, AN
    APPLIED PHYSICS LETTERS, 1999, 75 (15) : 2319 - 2321
  • [9] Nanoscale investigation of power semiconductor devices by scanning capacitance force microscopy
    Satoh, Nobuo
    Doi, Atsushi
    Masuda, Sho
    Yamamoto, Hidekazu
    2019 21ST EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE '19 ECCE EUROPE), 2019,
  • [10] Scanning capacitance microscopy of semiconductor materials
    Raineri, V
    Giannazzo, F
    BEAM INJECTION ASSESSMENT OF MICROSTRUCTURES IN SEMICONDUCTORS, 2000, 2000, 78-79 : 425 - 432