Novel method for silicon quantum wire transistor fabrication

Local stress-limited oxidation was used to fabricate silicon quantum wire transistors with a channel diameter of 5 nm. The oxidation of source and drain regions was prevented with a silicon nitride diffusion barrier. A novel wraparound gate was used to improve the gate control of the potential in the channel. The electrical properties of these devices were investigated at room temperature. Ideal subthreshold behavior, with the subthreshold swing equal to 60.3 mV/dec, was observed. © 1999 American Vacuum Society.