Room-temperature electroluminescence of a Si-based p-i-n diode with β-FeSi2 particles embedded in the intrinsic silicon

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作者：
Li, Cheng [1 ]
Suemasu, T. [2 ]
Hasegawa, F. [2 ]
机构：
[1] Department of Physics, Xiamen University, Xiamen, Fujian 361005, China
[2] Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
来源：
Journal of Applied Physics | 2005年 / 97卷 / 04期
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