MULTIPLE-OCTAVE SUPERHIGH-FREQUENCY TRANSISTOR AMPLIFIERS WITH ELECTRONIC GAIN CONTROL.

A set of multiple-octave, thin-film hybrid amplifier modules, type UM, is described that are designed on the basis of two circuits in combination with an electronically controlled attenuator using p-i-n diodes. The set includes small-signal modules designed UM-1 and UM-2 (having high gains), a type UM-3 (in three versions with electronic gain control), and a type UM-4 module of medium power (in three versions). The modules can be assembled into wideband amplifiers with an upper frequency limit of approx. 1 GHz, gains of 5 to 100 db, noise factors down to 6 db, and output power in the saturation conditions greater than equivalent to 200 mw, and a smooth gain control of 30 db.