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- [2] MICROMACHINING IN III-V SEMICONDUCTORS USING WET PHOTOELECTROCHEMICAL ETCHINGJOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (06): : 2497 - 2501KHARE, RHU, ELBROWN, JJMELENDES, MA
- [3] Wet etching of III-V semiconductorsPROCESSING AND PROPERTIES OF COMPOUND SEMICONDUCTORS, 2001, 73 : 215 - 295Gomes, WP
- [4] Dry etching damage in III-V semiconductorsJOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (06): : 3658 - 3662Murad, SRahman, MJohnson, NThoms, SBeaumont, SPWilkinson, CDW
- [5] REACTIVE ION ETCHING OF III-V SEMICONDUCTORSINTERNATIONAL JOURNAL OF MODERN PHYSICS B, 1994, 8 (14): : 1781 - 1786PEARTON, SJ
- [6] Chemical etching of group III-V semiconductorsJOURNAL OF CHEMICAL EDUCATION, 1998, 75 (07) : 840 - 843Kadhim, NJLaurie, SHMukherjee, D
- [7] ION-BEAM DAMAGE-INDUCED MASKING FOR PHOTOELECTROCHEMICAL ETCHING OF III-V SEMICONDUCTORSJOURNAL OF APPLIED PHYSICS, 1986, 60 (11) : 4012 - 4014CHI, GCOSTERMAYER, FWCUMMINGS, KDHARRIOTT, LR
- [8] Laser-assisted dry etching ablation for microstructuring of III-V semiconductorsADVANCED LASER PROCESSING OF MATERIALS - FUNDAMENTALS AND APPLICATIONS, 1996, 397 : 509 - 518Dubowski, JJJulier, MSproule, GIMason, B
- [9] LASER-INDUCED PHOTOCHEMICAL DRY ETCHING OF III-V COMPOUND SEMICONDUCTORSPROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1985, 540 : 467 - 471ASHBY, CIH
- [10] Speciation During Wet Etching of III-V Semiconductors15TH INTERNATIONAL SYMPOSIUM ON SEMICONDUCTOR CLEANING SCIENCE AND TECHNOLOGY (SCST 15), 2017, 80 (02): : 163 - 170Hinckley, A.Foster, E.Corley, T.Muscat, A. J.
