Gettering of Cu by He-induced cavities in SIMOX materials

被引：0
|
作者：
Zhang, Miao [1 ]
Wang, Lianwei [1 ]
Gao, Jianxia [1 ]
Lin, Chenglu [1 ]
Hemment, P.L.F. [1 ]
Gutjahr, K. [1 ]
Goesele, U. [1 ]
机构：
[1] Chinese Acad of Sciences, Shanghai, China
来源：
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms | 1998年 / 134卷 / 3-4期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：360 / 364
相关论文
共 50 条
  • [1] Gettering of Cu by He-induced cavities in SIMOX materials
    Zhang, M
    Wang, LW
    Gao, JX
    Lin, CL
    Hemment, PLF
    Gutjahr, K
    Gosele, U
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1998, 134 (3-4): : 360 - 364
  • [2] Comment on "Gettering of Cu by He-induced cavities in SIMOX materials"
    Yankov, RA
    Skorupa, W
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1999, 149 (04): : 445 - 446
  • [3] Enhancement of He-induced cavities in silicon by hydrogen plasma treatment
    Liu, CL
    Ntsoenzok, E
    Vengurlekar, A
    Ashok, S
    Alquier, D
    Ruault, MO
    Dubois, C
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2005, 23 (03): : 990 - 994
  • [4] Gettering of Cu to voids induced by H+ implantation in SIMOX substrate
    Zhang, M
    Lin, CL
    Hemment, PLF
    Gutjahr, K
    Gosele, U
    PROCEEDINGS OF THE EIGHTH INTERNATIONAL SYMPOSIUM ON SILICON-ON-INSULATOR TECHNOLOGY AND DEVICES, 1997, 97 (23): : 86 - 91
  • [5] Gettering of Cu to hydrogen-induced cavities in Si
    Hall, KC
    Goldberg, RD
    Lowes, TD
    Simpson, PJ
    Mitchell, IV
    Weatherly, GC
    CANADIAN JOURNAL OF PHYSICS, 1996, 74 : S248 - S251
  • [6] GETTERING OF CU AND NI IMPURITIES IN SIMOX WAFERS
    JABLONSKI, J
    MIYAMURA, Y
    IMAI, M
    TSUYA, H
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1995, 142 (06) : 2059 - 2066
  • [7] Gettering of diffused Au and of Cu and Ni contamination in silicon by cavities induced by high energy He implantation
    El Bouayadi, R
    Regula, G
    Pichaud, B
    Lancin, M
    Dubois, C
    Ntsoenzok, E
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2000, 222 (01): : 319 - 326
  • [8] Effects of self-ion implantation on the thermal growth of He-induced cavities in silicon
    Liu, CL
    Alquier, D
    Cayrel, F
    Ntsoenzok, E
    Ruault, MO
    GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY, 2004, 95-96 : 337 - 342
  • [9] Mossbauer study of the proximity gettering of cobalt atoms to He-induced nanosized voids in c-Si
    Deweerd, W
    Barancira, T
    Bukshpan, S
    Demuynck, S
    Langouche, G
    Milants, K
    Moons, R
    Verheyden, J
    Pattyn, H
    PHYSICAL REVIEW B, 1996, 53 (24) : 16637 - 16643
  • [10] Study of He-induced nano-cavities as sinks of oxygen for forming silicon-on-insulator
    李炳生
    张崇宏
    郝小鹏
    王丹妮
    周丽宏
    张洪华
    杨义涛
    张丽卿
    Chinese Physics B, 2008, (10) : 3836 - 3840
12345