Oxidation treatment on Ni/Au Ohmic contacts to p-type GaN

被引：0
|
作者：
机构：
[1] Chen, Z.Z.
[2] Qin, Z.X.
[3] Hu, X.D.
[4] Yu, T.J.
[5] Zhang, B.
[6] Yang, Z.J.
[7] Tong, Y.Z.
[8] Ding, X.M.
[9] Zhang, G.Y.
来源：
Chen, Z.Z. (zzchen@pku.edu.cn) | / Wiley-VCH Verlag期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] Oxidation treatment on Ni/Au ohmic contacts to p-type GaN
    Chen, ZZ
    Qin, ZX
    Hu, XD
    Yu, TJ
    Zhang, B
    Yang, ZJ
    Tong, YZ
    Ding, XM
    Zhang, GY
    5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, 2003, 0 (07): : 2189 - 2192
  • [2] The effect of heat treatment on Ni/Au ohmic contacts to p-type GaN
    Chen, LC
    Ho, JK
    Chen, FR
    Kai, JJ
    Chang, L
    Jong, CS
    Chiu, CC
    Huang, CN
    Shih, KK
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1999, 176 (01): : 773 - 777
  • [3] Oxidized Ni/Pt and Ni/Au ohmic contacts to p-type GaN
    Chen, LC
    Ho, JK
    Jong, CS
    Chiu, CC
    Shih, KK
    Chen, FR
    Kai, JJ
    Chang, L
    APPLIED PHYSICS LETTERS, 2000, 76 (25) : 3703 - 3705
  • [4] Investigation of oxidation mechanism for ohmic formation in Ni/Au contacts to p-type GaN layers
    Lee, CS
    Lin, YJ
    Lee, CT
    APPLIED PHYSICS LETTERS, 2001, 79 (23) : 3815 - 3817
  • [5] Low-resistance ohmic contacts to p-type GaN achieved by the oxidation of Ni/Au films
    Ho, JK
    Jong, CS
    Chiu, CC
    Huang, CN
    Shih, KK
    Chen, LC
    Chen, FR
    Kai, JJ
    JOURNAL OF APPLIED PHYSICS, 1999, 86 (08) : 4491 - 4497
  • [6] Low-resistance ohmic contacts to p-type GaN achieved by the oxidation of Ni/Au films
    J Appl Phys, 8 (4491):
  • [7] Transparent (Ni,Au)/ZnO:Al-Based Ohmic Contacts to p-Type GaN as an Insight into the Role of Ni and Au in Standard p-Type GaN Contacts
    Wojcicka, Aleksandra
    Fogarassy, Zsolt
    Kravchuk, Tatyana
    Saguy, Cecile
    Kaminska, Eliana
    Perlin, Piotr
    Grzanka, Szymon
    Borysiewicz, Michal Adam
    ACS APPLIED MATERIALS & INTERFACES, 2024, 16 (44) : 61284 - 61292
  • [8] Low-resistance Pt/Ni/Au ohmic contacts to p-type GaN
    Jang, JS
    Chang, IS
    Kim, HK
    Seong, TY
    Lee, SH
    Park, SJ
    APPLIED PHYSICS LETTERS, 1999, 74 (01) : 70 - 72
  • [9] Ohmic contacts to p-type GaN using a Ni/Pt/Au metallization scheme
    Jang, JS
    Park, KH
    Jang, HK
    Kim, HG
    Park, SJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (06): : 3105 - 3107
  • [10] Importance of layer distribution in Ni and Au based ohmic contacts to p-type GaN
    Mauduit, Clement
    Tlemcani, Taoufik Slimani
    Zhang, Meiling
    Yvon, Arnaud
    Vivet, Nicolas
    Charles, Matthew
    Gwoziecki, Romain
    Alquier, Daniel
    MICROELECTRONIC ENGINEERING, 2023, 277
12345