FRINGING FIELDS AND INTERFACE STATES EFFECTS OF INCOMPLETE CHARGE TRANSFER IN CHARGE-COUPLED DEVICES.

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Barsan, R.M.
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| 1600年 / 21期
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The transfer of charge from under a storage gate of a three-phase surface-channel charge-coupled device is analysed including both free charge transfer mechanisms and interface states trapping effects. A method based on a piecewise approximation for the emission rate from interface states is proposed and used to derive the transfer characteristics in the presence of interface traps. It is concluded that trapping effects are a strong limitation on the transfer efficiencies obtainable in surface-channel charge-coupled devices.
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