Static random access memory cell using a double-emitter resonant-tunneling hot electron transistor for gigabit-plus memory applications

被引：0
|
作者：
Mori, Toshihiko [1 ]
Muto, Shunichi [1 ]
Tamura, Hirotaka [1 ]
Yokoyama, Naoki [1 ]
机构：
[1] Fujitsu Ltd, Atsugi, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1994年 / 33卷 / 1 B期
关键词：
Random access storage;
D O I：
暂无
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学科分类号：
摘要：
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页码：791 / 793
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