Impact of tunnel currents and channel resistance on the characterization of channel inversion layer charge and polysilicon-gate depletion of sub-20-angstrom gate oxide MOSFET's

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Advanced Micro Devices, Inc, Sunnyvale, United States [1 ]
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IEEE Trans. Electron Devices | / 8卷 / 1650-1655期
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Number:; -; Acronym:; NSF; Sponsor: National Science Foundation; SRC; Sponsor: Semiconductor Research Corporation;
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