Theoretical studies of interstitial boron defects in silicon

被引：0
|
作者：
Hakala, M. [1 ]
Puska, M.J. [1 ]
Nieminen, R.M. [1 ]
机构：
[1] Laboratory of Physics, Helsinki University of Technology, P.O. Box 1100, FIN-02015 HUT, Finland
来源：
Physica B: Condensed Matter | 1999年 / 273卷
关键词：
Number:; -; Acronym:; Sponsor: Academy of Finland;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：268 / 270
相关论文
共 50 条
  • [1] Theoretical studies of interstitial boron defects in silicon
    Hakala, M
    Puska, MJ
    Nieminen, RM
    PHYSICA B-CONDENSED MATTER, 1999, 273-4 : 268 - 270
  • [2] PHOTOCONDUCTIVITY STUDIES OF DEFECTS IN P-TYPE SILICON - BORON INTERSTITIAL AND ALUMINUM INTERSTITIAL DEFECTS
    CHERKI, M
    KALMA, AH
    PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (02): : 647 - &
  • [3] INTERSTITIAL DEFECTS INVOLVING BORON IN IRRADIATED SILICON
    LAITHWAITE, K
    NEWMAN, RC
    TOTTERDELL, DHJ
    JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (02): : 236 - 242
  • [4] Electronic absorption of interstitial boron-related defects in silicon
    Khirunenko, Lyudmila I.
    Sosnin, Mikhail G.
    Duvanskii, Andrei V.
    Abrosimov, Nikolai V.
    Riemann, Helge
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2017, 214 (07):
  • [5] Defects involving interstitial boron in low-temperature irradiated silicon
    Khirunenko, L. I.
    Sosnin, M. G.
    Duvanskii, A. V.
    Abrosimov, N. V.
    Riemann, H.
    PHYSICAL REVIEW B, 2016, 94 (23)
  • [6] Theoretical studies of native defects in cubic boron nitride
    Piquini, P
    Mota, R
    Schmidt, TM
    Fazzio, A
    PHYSICAL REVIEW B, 1997, 56 (07): : 3556 - 3559
  • [7] Interstitial boron defects in Si
    Adey, J
    Goss, JP
    Jones, R
    Briddon, PR
    PHYSICA B-CONDENSED MATTER, 2003, 340 : 505 - 508
  • [8] Studies of boron segregation to {311} defects in silicon-implanted silicon
    Xia, J
    Saito, T
    Kim, R
    Aoki, T
    Kamakura, Y
    Taniguchi, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (4B): : 2319 - 2323
  • [9] A theoretical investigation on the chemical bonding of interstitial and vacancy defects in silicon during their migration
    Cargnoni, F
    Colombo, L
    Gatti, C
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1997, 127 : 235 - 238
  • [10] CHARGE STATE OF INTERSTITIAL INTRINSIC DEFECTS AND SUBSTITUTION OF THOSE FOR BORON ATOMS IN SILICON LATTICE
    BEREZHNOV, NI
    SUPRUMBELEVICH, YR
    CHELYADINSKII, AR
    TAKHER, KIK
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1991, 34 (04): : 55 - 59
12345