LASER-INDUCED CHEMICAL ETCHING OF SILICON IN CHLORINE ATMOSPHERE.

被引：0
|
作者：
Mogyorosi, P. [1 ]
Kullmer, R. [1 ]
Bauerle, D. [1 ]
机构：
[1] Johannes-Kepler-Univ Linz, Linz, Austria, Johannes-Kepler-Univ Linz, Linz, Austria
来源：
Applied physics. A, Solids and surfaces | 1988年 / A45卷 / 04期
关键词：
ARGON - CHLORINE - ETCHING - Laser Applications - KRYPTON - LASERS; GAS; -; Applications;
D O I：
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学科分类号：
摘要：
Laser-induced chemical etching of single-crystalline (100) Si in Cl//2 atmosphere has been investigated for continuous Ar** plus and Kr** plus laser irradiation at around 351 nm, and at 457. 9, 488. 0, 514. 5 and 647. 1 nm. For laser irradiances below 10**5 w/cm**2 the etching mechanism is non-thermal, and is based on photo-generated electron-hole pairs within the Si surface and Cl atoms produced within the gas phase. The experimental results are compared with model calculations.
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页码：293 / 299
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