Surface stress in the growth of silicon oxide layer

被引：0
|
作者：
Itakura, Akiko N. [1 ]
Narushima, Tetsuya [1 ,2 ]
Kurashina, Takayuki [3 ]
Kitajima, Masahiro [1 ]
Teraishi, Kazuo [4 ]
Yamada, Aruba [4 ]
Miyamoto, Akira [4 ]
机构：
[1] Natl. Research Institute for Metals, 1-2-1, Sengen, Tsukuba, Japan
[2] University of Tsukuba, 1-1-1, Tennodai, Tsukuba, Japan
[3] LSI Logic Japan Semiconductor Inc., 10, Kitahara, Tsukuba, Japan
[4] Tohoku University, 7, Aramaki-aza-Aoba, Aoba-ku, Sendai, Japan
来源：
Shinku/Journal of the Vacuum Society of Japan | 1999年 / 42卷 / 10期
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摘要：
12
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页码：929 / 932
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