Dislocation-related electronic states in strain-relaxed Si1-xGex/Si epitaxial layers grown at low temperature

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作者：
Mooney, P.M. [1 ]
Shum, Kai [1 ]
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[1] IBM T.J. Watson Research Cent, Yorktown Heights, United States
来源：
Materials Science Forum | 1997年 / 258-263卷 / pt 1期
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页码：151 / 158
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