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- [4] In-situ infrared observation of etching and oxidation processes of si surface in NH4F solution SPECTROSCOPIC TOOLS FOR THE ANALYSIS OF ELECTROCHEMICAL SYSTEMS, 2002, 99 (15): : 161 - 170
- [10] Preparation of an ultraclean and atomically controlled hydrogen-terminated Si(111)-(1×1) surface revealed by high resolution electron energy loss spectroscopy, atomic force microscopy, and scanning tunneling microscopy: Aqueous NH4F etching process of Si(111) Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2007, 46 (9 A): : 5701 - 5705