Separation of charge transfer and surface recombination processes by simultaneous measurement of photocurrent and excess microwave conductivity profiles of Si(111) in NH4F

被引:0
|
作者
机构
[1] Lewerenz, H.J.
[2] Schlichthorl, G.
来源
Lewerenz, H.J. | 1600年 / American Inst of Physics, Woodbury, NY, United States卷 / 75期
关键词
Semiconducting silicon;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 11 条
  • [1] SEPARATION OF CHARGE-TRANSFER AND SURFACE RECOMBINATION PROCESSES BY SIMULTANEOUS MEASUREMENT OF PHOTOCURRENT AND EXCESS MICROWAVE CONDUCTIVITY PROFILES OF SI(111) IN NH4F
    LEWERENZ, HJ
    SCHLICHTHORL, G
    JOURNAL OF APPLIED PHYSICS, 1994, 75 (07) : 3544 - 3547
  • [2] INTERFACE CONDITION OF N-SI(111) DURING PHOTOCURRENT OSCILLATIONS IN NH4F SOLUTIONS
    AGGOUR, M
    GIERSIG, M
    LEWERENZ, HJ
    JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1995, 383 (1-2): : 67 - 74
  • [3] Effect of dissolved oxygen on surface morphology of Si(111) immersed in NH4F and NH4OH solutions
    Fukidome, H
    Matsumura, M
    ELECTROCHEMICAL PROCESSING IN ULSI FABRICATION AND SEMICONDUCTOR/METAL DEPOSITION II, PROCEEDINGS, 1999, 99 (09): : 373 - 378
  • [4] In-situ infrared observation of etching and oxidation processes of si surface in NH4F solution
    Niwano, M
    Kondo, Y
    Kimura, Y
    SPECTROSCOPIC TOOLS FOR THE ANALYSIS OF ELECTROCHEMICAL SYSTEMS, 2002, 99 (15): : 161 - 170
  • [5] Slow etching of triangular pits on atomically flat monohydride terminated Si(111) surface in 40% NH4F solution
    Bae, Sang-Eun
    Yoon, Jung-Hyun
    Lee, Chi-Woo J.
    SURFACE SCIENCE, 2008, 602 (06) : 1185 - 1190
  • [6] Electronic and surface properties during the etch-back of anodic oxides on Si(111) surfaces in 40% NH4F solution
    Yang, F.
    Roodenko, K.
    Hinrichs, K.
    Rappich, J.
    JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2007, 17 (04) : S56 - S60
  • [7] In situ electrochemical ATR-FTIR spectroscopic investigation of hydrogen-terminated Si(111) surface in diluted NH4F solution
    Wang, Y
    Li, SFY
    Ye, JH
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2001, 148 (08) : E336 - E340
  • [8] Behavior of hydrogen-terminated Si(111) surface in oxygen-dissolved NH4F solution with or without Cu(II) ions
    Bae, SE
    Lee, JS
    Lee, IC
    Song, MB
    Lee, CWJ
    BULLETIN OF THE KOREAN CHEMICAL SOCIETY, 2005, 26 (11) : 1891 - 1894
  • [9] ATOMIC-SCALE ETCHING PROCESSES OF N-SI(111) IN NH4F SOLUTIONS - IN-SITU SCANNING-TUNNELING-MICROSCOPY
    KAJI, K
    YAU, SL
    ITAYA, K
    JOURNAL OF APPLIED PHYSICS, 1995, 78 (09) : 5727 - 5733
  • [10] Preparation of an ultraclean and atomically controlled hydrogen-terminated Si(111)-(1×1) surface revealed by high resolution electron energy loss spectroscopy, atomic force microscopy, and scanning tunneling microscopy: Aqueous NH4F etching process of Si(111)
    Kato, Hiroki
    Taoka, Takumi
    Nishikata, Susumu
    Sazaki, Gen
    Yamada, Taro
    Czajka, Ryszard
    Wawro, Andrzej
    Nakajima, Kazuo
    Kasuya, Atsuo
    Suto, Shozo
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2007, 46 (9 A): : 5701 - 5705