Identification of generation-recombination centers and traps in virgin and Fowler-Nordheim stressed metal-oxide-semiconductor field-effect transistors by low temperature charge pumping technique

被引：0
|
作者：
Hsu, Jen-Tai [1 ]
Viswanathan, C.R. [1 ]
机构：
[1] Univ of California, Los Angeles, United States
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1994年 / 33卷 / 1 B期
关键词：
MOSFET devices;
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页码：683 / 387
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