Influence of emitter-base junction displacement on the band structure in heterojunction bipolar transistors

被引：0
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作者：
Kumar, K.P. [1 ]
Dasgupta, A. [1 ]
机构：
[1] Indian Inst of Technology, Madras, India
来源：
Diffusion and Defect Data Pt.B: Solid State Phenomena | 1997年 / 55卷
关键词：
Energy gap - Permittivity - Semiconducting aluminum compounds - Semiconducting gallium arsenide - Semiconductor device models - Semiconductor device structures;
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摘要：
Analytical expressions for conduction band edges are presented for compositionally graded Heterojunction Bipolar Transistors (HBT's) taking the displacement of the P-N junction relative to material junction into account. In order to demonstrate the effect of P-N junction displacement on the band structure the expressions are applied to AlGaAs/GaAs material system. It is shown that displacement of P-N junction into the wide bandgap (referred to as EB+case) causes barriers whereas displacement into narrow bandgap semiconductor (referred to as EB- case) leads to dips in the conduction band. In EB+ case linear grading (LG) seems to offer a lower turnon voltage compared to parabolic grading (PG).
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页码：101 / 103
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