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Contribution of hole trap to persistent photoconductivity in n-type GaN
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[1]
Cai, S.
[2]
Parish, G.
[3]
Dell, J.M.
[4]
Nener, B.D.
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Cai, S.
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1600年
/ American Institute of Physics Inc.卷
/ 96期
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1600,
(American Institute of Physics Inc.):
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