Effects of hot-carrier degradation in analog CMOS circuits

被引：0

|

作者：

Siemens Corporate R&D, Munich, Germany ^{[1
]}

机构：

来源：

Microelectron Eng | / 1-4卷 / 285-292期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

收藏

相关论文

共 50 条

[1] Effects of hot-carrier degradation in analog CMOS circuits
Thewes, R
Weber, W
MICROELECTRONIC ENGINEERING, 1997, 36 (1-4) : 285 - 292
[2] THE IMPACT OF NMOSFET HOT-CARRIER DEGRADATION ON CMOS ANALOG SUBCIRCUIT PERFORMANCE
CHAN, VH
CHUNG, JE
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1995, 30 (06) : 644 - 649
[3] DYNAMIC EFFECTS IN HOT-CARRIER DEGRADATION RELEVANT FOR CMOS OPERATION
WEBER, W
BROX, M
MICROELECTRONICS AND RELIABILITY, 1993, 33 (11-12): : 1729 - 1736
[4] DYNAMIC EFFECTS IN HOT-CARRIER DEGRADATION RELEVANT FOR CMOS OPERATION
WEBER, W
BROX, M
MICROELECTRONIC ENGINEERING, 1992, 19 (1-4) : 453 - 460
[5] NEW INSIGHTS IN OPTIMIZING CMOS INVERTER CIRCUITS WITH RESPECT TO HOT-CARRIER DEGRADATION
LEE, PM
IEICE TRANSACTIONS ON ELECTRONICS, 1994, E77C (02) : 194 - 199
[6] AN INVESTIGATION OF HOT-CARRIER EFFECTS IN SUBMICRON CMOS INTEGRATED-CIRCUITS
FANG, P
RAKKHIT, R
YUE, JT
MICROELECTRONICS AND RELIABILITY, 1993, 33 (11-12): : 1713 - 1727
[7] IMPROVEMENT OF HOT-CARRIER DEGRADATION IN COOLED CMOS
AOKI, M
SHIMOHIGASHI, K
YANO, K
MASUHARA, T
1989 SYMPOSIUM ON VLSI TECHNOLOGY: DIGEST OF TECHNICAL PAPERS, 1989, : 81 - 82
[8] On the methodology of assessing hot-carrier reliability of analog circuits
Le, H
Marcoux, PJ
Jiang, WJ
Chung, JE
2000 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP FINAL REPORT, 2000, : 20 - 23
[9] Hot carrier reliability simulation for CMOS analog circuits
Pressecq, F
Noullet, JL
Bordonado, B
EECC'97 - PROCEEDINGS OF THE THIRD ESA ELECTRONIC COMPONENTS CONFERENCE, 1997, 395 : 345 - 350
[10] CMOS hot-carrier degradation and device lifetime at cryogenic temperatures
WangRatkovic, J
Lacoe, RC
MacWilliams, KP
Song, M
1996 INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP FINAL REPORT, 1996, : 169 - 169

← 1 2 3 4 5 →