Study of GaN films grown by metalorganic chemical vapour deposition

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作者：

University of Ghent, IMEC, Department of Information Technology ^{[1
]}

不详 ^{[2
]}

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来源：

MRS Internet J. Nitride Semicond. Res. | / 6d期

关键词：

Atmospheric pressure - Diffractometers - Epitaxial growth - Gallium - Light emitting diodes - Metallorganic chemical vapor deposition - Optical data storage - Optical properties - Photoluminescence - Surfaces - X ray diffraction;

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摘要：

In this paper GaN films are examined, which are grown on basal plane (0001) sapphire substrates. Growth is performed in a novel type of vertical rotating disk reactor. The effects of several growth parameters on the film quality are discussed. The results on n-type doping of GaN with SiH4 are presented. The GaN layers were evaluated by surface morphology studies, DC X-ray diffraction, electrical and optical characterisation.

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