Ultrafast, dual-depletion region, InGaAs/InP p-i-n detector

被引：0
|
作者：
Bellcore, Morristown, United States [1 ]
机构：
来源：
J Lightwave Technol | / 8卷 / 1859-1864期
关键词：
Capacitance - Electrons - Light absorption - Numerical methods - Permittivity - Semiconducting indium compounds - Semiconducting indium phosphide - Semiconductor device structures;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] Ultrafast, dual-depletion region, InGaAs/InP p-i-n detector
    Effenberger, FJ
    Joshi, AM
    JOURNAL OF LIGHTWAVE TECHNOLOGY, 1996, 14 (08) : 1859 - 1864
  • [2] MONOLITHIC INTEGRATION OF A PLANAR EMBEDDED INGAAS P-I-N DETECTOR WITH INP DEPLETION-MODE FETS
    TELL, B
    LIAO, ASH
    BROWNGOEBELER, KF
    BRIDGES, TJ
    BURKHARDT, G
    CHANG, TY
    BERGANO, NS
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (11) : 2319 - 2321
  • [3] Dark current simulation of InP/InGaAs/InP p-i-n photodiode
    Wang, X. D.
    Hu, W. D.
    Chen, X. S.
    Lu, W.
    Tang, H. J.
    Li, T.
    Gong, H. M.
    NUSOD '08: PROCEEDINGS OF THE 8TH INTERNATIONAL CONFERENCE ON NUMERICAL SIMULATION OF OPTOELECTRONIC DEVICES, 2008, : 31 - +
  • [4] Optimization of InGaAs/InP p-i-n photodiode for dual axis position detection systems
    Budianu, E
    Purica, M
    Rusu, E
    2000 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, CAS 2000 PROCEEDINGS, 2000, : 381 - 384
  • [5] Low dark current InGaAs(P)/InP p-i-n photodiodes
    Chen, YW
    Hsu, WC
    Hsu, RT
    Wu, YH
    Chen, YJ
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (7A): : 4249 - 4252
  • [6] Low dark current InGaAs(P)/InP p-i-n photodiodes
    Chen, Yen-Wei
    Hsu, Wei-Chou
    Hsu, Rong-Tay
    Wu, Yue-Huei
    Chen, Yeong-Jia
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2003, 42 (7 A): : 4249 - 4252
  • [7] Low dark current InGaAs(P)/InP p-i-n photodiodes
    Chen, YW
    Hsu, WC
    Chen, YJ
    PROCEEDINGS OF THE SIXTH CHINESE OPTOELECTRONICS SYMPOSIUM, 2003, : 95 - 98
  • [8] Absorption saturation nonlinearity in InGaAs/InP p-i-n photodiodes
    Juodawlkis, PW
    O'Donnell, FJ
    Hargreaves, JJ
    Oakley, DC
    Napoleone, A
    Groves, SH
    Mahoney, LJ
    Molvar, KM
    Missaggia, LJ
    Donnelly, JP
    Williamson, RC
    Twichell, JC
    2002 IEEE/LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2, 2002, : 426 - 427
  • [9] Simulation of electrical and optical characteristics for InP/InGaAs/InP p-i-n photodiodes
    Wang, Xiaodong
    Hu, Weida
    Chen, Xiaoshuang
    Tang, Hengjing
    Li, Tao
    Gong, Haimei
    Lu, Wei
    35TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ 2010), 2010,
  • [10] Model Calibration of InGaAs/InP p-I-n Test Structures
    Walker, A. W.
    Pitts, O.
    Storey, C.
    Waldron, P.
    2019 19TH INTERNATIONAL CONFERENCE ON NUMERICAL SIMULATION OF OPTOELECTRONIC DEVICES (NUSOD 2019), 2019, : 111 - 112
12345